碳掺杂AlGaAs的MOCVD生长及808nm大功率激光器

Growth of C-doped AlGaAs by Lp-MOCVD and Fabrication of High-power 808 nm AlGaAs/GaAs Semiconductor Laser

用 CCl4 作为掺杂剂 ,进行了掺碳 Al Ga As层的 LP-MOCVD生长 ,并对其掺杂特性进行了研究 ,分析了各生长参数对掺杂的影响 ;研制了碳掺杂 Al Ga As限制层 80 8nm大功率半导体激光器 ;激光器单面连续波输出功率大于 1 W,功率效率为 0 .7W/ A。

The C-doped AlGaAs layer was grown by MOCVD. The doping characteristics were investigated. High-power 808 nm AlGaAs/GaAs laser was fabricated whose threshold current is 250～300 mA and CW output power is 1 W.