低能离子束制备(Ga,Gd,As)薄膜

(Ga, Gd, As) Film Prepared by Low Energy Ion Beam System

室温条件下 ,用离子束外延设备制备 ( Ga,Gd,As)样品 ,X射线衍射 ( XRD)结果表明除了 Ga As衬底峰 ,没有发现其他新相的衍射峰。俄歇电子能谱 ( AES)分析了样品中元素随深度的变化 ,不同样品中元素的分布有着不同的特点。并运用原子力显微镜 ( AFM)研究了样品表面的形貌特点 ,表明样品表面的粗糙度与 Gd注入过程中在样品表面沉积的多少有关。运用交变梯度磁强计 ( AGM)对薄膜进行磁性分析 ,结果表明有的样品在室温条件下出现铁磁性 ,但金属钆本身具有室温铁磁性 ,因而需要进一步分析。

Ga, Gd, As) film was prepared on GaAs (100) substrate by ion beam technique with low energy of 1 000 eV at room temperature. There was no new peak found except the GaAs substrate main peaks from the X-ray diffraction results. The element distributions vary much in the two samples because of the ion doses difference from the element depth profile by AES. Sample surface morphology was obtained by AFM, whose roughness extent was related to the amount of Gd ion deposit on sample surface after implantation. Although room temperature ferromagnetic behavior showed in some samples with alternating gradient magnetometer, further investigation still need to be carried out for gadolinium metals ferromagnetic behavior at room temperature.