硅双极晶体管1/f噪声的物理机制

Physical Mechanism of 1 / f Noise in Silicon Bipolar-Transistors

在低频下,1/f噪声是硅双极晶体管的主要噪声.到目前为止,一般认为1/f噪声有二种来源:表面态的存在和体内自由载流子迁移率的涨落,这二种1/f噪声有不同的表现形式.目前还没有统一的模型来描述1/f噪声,这是由于1/f噪声的物理基础还没有一个完整的认识.本文对1/f噪声研究的主要结果作了评述.

The 1 / f noise at low frequency for silicon bipolar transistors is important. It is believed, as far, that generally there are two origins of 1 / f noise, which includes surface states and mobility fluctuation of free carriers as 'bulk' effect. They obey different formulas. They have not united mainly because the nature of 1 / f noise is not recognized. This paper reviews the main results of the study of 1 / f noise.