摘要
本文叙述了硅堆的可靠性,讨论了工艺因素对硅堆质量的影响,分析了Al-Si蚀坑产生的原因.
Reliability of High Voltage Silicon rectifier stack is described in the paper. The effect of technological process factors on quality of silicon rectifier are dicussed and the causes of Al-Si etching hole are analysed.
出处
《电子器件》
CAS
1993年第3期113-117,共5页
Chinese Journal of Electron Devices
