摘要
应用一种新的半导体激光器理论模型—微波等效电路模型来研究半导体激光器的高频响应特性,得出半导体激光器高频响应特性与偏置电流的关系以及各电路参数对高频响应特性的影响,提出了提高半导体激光器高频响应的途径。
The high frequency response of semiconductor laser diodes is investigated in detail by applying a new model of semicondactor laser diodes-microwave equivalent circuit models. The effect of bias current and circuit parameter on the high frequency response are disscussed. The methods of improviug high frequcncy response of semiconductor laser disdes are suggested.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1993年第4期395-399,共5页
Journal of University of Electronic Science and Technology of China
基金
机电部预研基金
关键词
半导体激光器
高频响特性
模型
seniconductor laser
high-frequency response charaeteristics
modulation
microwave
equivalent circuit
model
