瞬态电荷收集法研究a-Si:H/a-SiN:H界面处的电子积累

Study of Electron Accumulation in a-Si:H/a-SiN:H Interface by Using Transient Charge Collection

本文介绍一种研究a-Si:H/a-SiN:H界面层电子积累特性的新方法,所用样品为Cr/a-SiN:H/a-Si:H/(n+)a-Si:H/AI.测试表明,a-Si:H/a-SiN:H界面是一个电子积累层,其电子面密度为3.2×10^(11)/cm^2,并且界面层中的电子面密度随外加电压的增加而线性增加。实验结果与理论分析相一致。

To understand better the properties of the interface layer of a-SiN:H and a-Si:H, we proposed a new measurement technique to probe the electron accumulation process caused by a step applied voltage. The samples with the structure of Cr/ a-SiN:H (3500A) /a-Si:H (2. 1μm)/n+ a-Si:H (500A)/A1 were used. The experimental results show that the a-SiN:H and a-Si:H contact forms an electron accumulation layer with electron density of about 3.2×1011cm-2. The density of accumulated electrons increases linearly with applied voltage, which agrees very well with theoretical calculation both in the shape of induced charge versus applied voltage curve and the magnitude of induced charge.