宽温区耐高温硅集成电路中MOS晶体管的电学特性

Electrical Characteristics of Silicon Integration MOSFET at Wide Operation Temperature Range and Very High Temperatures

本文简化了MOSFET伏安特性的精确公式,得到了一个能反映27℃～300℃硅集成MOSFET=级温度效应的简单方程。并用该方程修正和完善了宽温区,耐高温MOSFET的ZTC模型。把原有公式在饱和区误差从29％以上,减小到8％以下。理论分析和实验结果都说明了本文的结论是正确的。

A simplifing equation, which can give sencond order temperature effects of silicon integration MOSFET from 27 to 300℃, has been presented by this paper. It is used to improve the ZTC model of MOSFET which works at wide operation temperature range and very high temperatures. The data indicates that the error of theoretical and experimentical values in saturation region has been reduced from more of 29% to less of 8%.The theoretical analysis and experimentical results have shown that the conclusion is correct.