摘要
相移掩模光刻技术,是近几年来为了开发超大规模集成电路(ULSI)而发展起来的一种新颖光刻技术。它应用了光学相移掩模方法,大大提高了现有光学光刻设备的分辨率水平。本文综述了相移光刻技术的发展及其在ULSI中的应用。
Recently, phase shifting lithography, as a novel lithography process, has been developped (or ULSI applications. It utilizes optical phase shifting mask to improve resolution limit for an existing wafer stepper. This paper describes the development of phase shifting lithography and its applications in ULSI technology.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1993年第2期77-83,共7页
Acta Electronica Sinica
关键词
光学光刻
相移
相移掩模
集成电路
Optical lithography, Phase shift, Phase shifting mask