热激弛豫过程动力学方程的建立及计算机模拟

Development of Kinetic Equation of Thermally Stimulated Relaxation Process and Computer Simulation

用热激去极化电流(TSDC)法对半绝缘GaAs(SI—GaAs)退火前后的深能级进行了测量,并推导出这一热激弛豫过程的一般动力学方程,用曲线拟合的方法对热激活能E,动力学阶数b等拟合,并用计算机模拟其理论曲线,理论与实验吻合。

The deep levels of semi-insulating GaAs crystal befor and after annealing are respectively measured by Thermally Stimulated Depolarization Current (TSDC) method and the general kinetic equation of the thermostimulating relaxation process are developed. The thermal activation energy E and the kinetic order b et cetera are fitted by curve fitting and the computer simulation of theoretic curves is carried out. The theoretic result is well coincide with the experiment.