摘要
本文描述一种专用于汉字字符发生器的1Mbit ROM的设计。文中对各部分电路设计作了详细的分析,指出设计中的特点。对研制成功的样品进行交、直流特性测试,结果表明电路性能完全达到设计和使用的要求。
The paper describes the design of 1M bit ROM for Chinese character generation. The circuit design of functional parts has been analysed in detail. The characteristics of the 1M bit ROM prototypes have been tested. The test results show that the performance of the device completely meets the requirements oi design and application.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1993年第5期16-23,共8页
Acta Electronica Sinica
基金
国家七.五攻关重点项目
