薄膜全耗尽SOI短沟道MOSFET准二维电流模型

A Pseudo-Two-Dimensional Model for the Thin-Film Fully Depleted SOI Short Channel MOSFET

本文在分析薄膜全耗尽SOI器件特殊物理效应的基础上,建立了可细致处理饱和区工作特性的准二维电流模型。该模型包括了场效应载流子迁移率、速度饱和以及短沟道效应等物理效应,可以描述薄膜全耗尽SOI器件所特有的膜厚效应、正背栅耦合(背栅效应)等对器件特性的影响,并且保证了电流、电导及其导数在饱和点的连续性。将模型模拟计算结果与二维器件数值模拟结果进行了对比,在整个工作区域(不考虑载流子碰撞离化的情况下)二者吻合得很好。

A pseudo-two-dimensional model,which can simulate the characteristics of thin film fully depleted SOI short channel MOSFET's in saturation region is developed based on a detailed analysis of special physical effects in thin film fully depleted SOI devices.The model not only physically takes account of second order effects such as carrier mobility degradation,velocity saturation and short channel effects and describes the unique film thickness and back gate effects in the SOI devices,but also guarantees the continuity of the current,output conductance and its derivative with respect to the drain voltage at the transition point from the linear to the saturation region.The computed results of the proposed model show good agreement with those obtained with two dimensional device numerical simulation.