NMOSFET低温阈值特性的研究

On the Low Temperature Threshold Behavior of NMOSFET's

本文对N沟多晶硅栅MOSFET的低温(77 K)阈值特性进行了理论和实验研究.结果表明,理论分析和测试结果一致,而且与器件的室温特性相比,77 K下器件的亚阈值和阈值电压特性以及衬底灵敏度均得到改善.基于这些结果,本文也给出了适于低温工作的增强型MOSFET的设计原则.

Low temperture (77 K) threshold characteristics of N-channel MOSFET's with a selfaligned polysilicon gate are considered both theoretically and experimentaly in this paper. Theoretical analysis and measured results are in good agreement. Relative to the device threshold behavior at room temperature, improvements in the subthreshold and threshold -voltage characteristics and in the substrate sensitivity at 77 K are observed. Based on the obtained results, a device design in principle is also presented for an enhancement-mode MOSFET that is suitable for operation at liquid nitrogen temperature.