摘要
本文系统地分析了S-G方法内在的侧风扩散现象,给出了它的应用条件和适用范围,为S-G方法的应用提供了依据。
This paper systematically analyzes the phenomenon of the crosswind effect inherent in the S-G scheme,and presents its applied conditions and fit ranges,which provides for the application of the S-G scheme.
出处
《东南大学学报(自然科学版)》
EI
CAS
CSCD
1993年第6期64-69,共6页
Journal of Southeast University:Natural Science Edition
关键词
半导体器件
模拟
S-G法
侧风扩散
semiconductor devices
simulation
drift
diffusion/S-G scheme
crosswind diffusion