多孔硅的光生伏特效应

PHOTOVOLTAIC EFFECT OF POROUS SILICON

多孔硅(PS)的可见光致发光的发现,引起人们对PS的光电特性及其在光电器件上应用可能性的广泛探索。已报道用PS制成发出可见光的电致发光器件及高灵敏的光探测器件。本文将报道PS层与金属接触,光照时能出现很强的光生伏特效应,利用这一特性有可能制成高效的光电转换器件。

A new photovoltaic characteristic of porous silicon(PS) is reported in this paper. The PS layer was prepared by anodization of p-type Si single cryatal wafers in HF aqueous solution at current density of about 10mA/cm2.When the PS layer was irradiated by light, an intense photo-electromotive force was generated on the sample. The potential of PS layer is higher than that of substrute. The photocurrent was inereased with increasing illuminance. There was no any photoelectromotive force on a p-type Si single crystal wafer when it was irradiated with light. These facts demonstrat that the photovoltaic effect is originated in PS layer. This effect was also observed on samples formed by n-Si single crystal wafers.