聚吡咯电化学掺杂过程的拉曼光谱研究

IN-SITU RAMAN STUDIES ON ELECTROCHEMICAL DOPING PROCESS OF POLYPYRROLE

共轭导电聚合物经过掺杂,电导率可以提高十几个数量级,由绝缘体变为导体.但是,掺杂对聚合物链结构的影响方面,人们目前尚所知甚少.从实验的角度看,由于物性测量结果和材料的制备过程密切相关,往往不容易重复,有时还会出现一些令人困惑的假象.电化学现场物性测量技术可以针对同一样品,由电化学方法改变掺杂最。

In-situ Raman spectra were recorded during the process of electrochemical redox of polypyrrole. The intensities of the four Raman peaks of polypyrrole [1566cm-1(vc=c), 1315cm-1(vc-c), 1040cm-1(δc-H) and 986Cm-1(δring)] are very sensitive to doping, and change reversion in doping-undoping cycles.The intensities decrease drastically with doping level, and disappear at the electrode potential of about +0.1V vs. Ag/ AgCl. The influence of anion size on doping was distinguished by the in-situ Raman technique. It is found that small size is in favor of do-ping.