摘要
用常压MOCVD法在GaAs衬底上生长了Z_(n1-x)Cd_xSe-ZnSe多层结构.通过X-射线衍射谱和光致发光等方法判断,表明该材料为多量子阱结构.从室温下的透射光谱上可以观察到这种多量子阱中的n=1的激子吸收峰,并观测到起因子激子的ns量级的光学双稳态.
Zn1-xCdxSe-ZnSe multilayers structure have been grown on GaAs substrate by atmospheric pressure MOCVD. This multilayers structure was diagnosed as multiple quantum wells (MQWs) by X-ray diffraction rocking curve and photolumineseence. Free exciton absorption peak in this MQWs structure is observed in the transmitted spectrum at room temperature. We first found out the optical bistability in Zn1-x Cdx Se-ZnSe MQWs with the nanosecond response time at room temperature.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1993年第3期221-224,共4页
Chinese Journal of Luminescence
基金
国家863高技术
国家攀登计划及国家自然科学基金
关键词
多量子阱
双稳态
半导体材料
激子
MOCVD
multiple quantum wells
ZnCdSe-ZnSe
optical bistability