含铝的富硅二氧化硅薄膜的发光特性及结构

Structure and Photoluminescence Characteristic of Al-doped Silicon-rich SiO_2 Thin Films

采用双离子束共溅射技术制备出掺铝的富硅二氧化硅复合薄膜(AlSiO),采用荧光分光光度计对样品进行PL测试表明:AlSiO复合膜共有三个发光峰,分别在370nm、410nm、510nm处。发光峰的位置随铝含量的变化基本上没有改变,峰强随铝含量有变化,且510nm处的峰强随铝含量增加而增强。PLE结果表明:370nm和410nm的PL峰与样品中的氧空位缺陷有关,而510nm的PL峰则是由于铝的掺入改变了样品中的缺陷状态所致,是Al、Si、O共同而复杂的作用。

The Al-doped silicon-rich SiO_2 composite films(AlSiO) have been prepared by the dual ion beam co-sputtering method.The photoluminescence spectrum(PL) of the films are measured with the fluorescence spectrometer and the results show that the AlSiO composite films have three photoluminescence peaks at 370?nm,410?nm and 510?nm respectively.The peak positions don't change when the contents of Al are changed.But the intensity of the peak changes with the change of the Al content and the peak intensity at 510?nm increases with the increase of the Al content.PLE measurements indicate that the PL peaks at 370?nm and 410?nm are related to the defect of the oxygen vacancy in the sample and the PL peak at 510?nm results from the defects induced by Al-doping and the complex coaction of Al,Si and O.