摘要
研究了一种新颖的添加了表面活性剂和HF的RCA的改进工艺,并和标准RCA工艺与目前被广泛采用的稀释RCA工艺进行了比较后指出,改进工艺对金属沾污和表面颗粒的有效去除能力,使0.18mm以上的颗粒能够控制在15颗以内,金属沾污能够有效降至109原子cm-2以下(Al略高小于1010cm-2)。
A new RCA technique is researched for cleaning polished silicon wafer, which is addedsurfactant and HF. Compared with traditional RCA and diluted RCA which is general used today.The improved RCA is efficient on decreasing the metal contamination and particulate. With the newRCA technique, particulate can be reduced to 15max@0.18mm, and metal contamination is lower than109 atoms cm-2 (Except Al<1010cm-2).
出处
《半导体技术》
CAS
CSCD
北大核心
2004年第7期14-17,共4页
Semiconductor Technology
基金
国家863火炬计划重点项目(2003EB030838)
