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AlGaN/GaN异质结极化行为与二维电子气 被引量：2

The polarization and 2DEG in AlGaN/GaN heterostructures
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摘要 AlGaN/GaN异质结及其相关器件因其优越的电学特性成为近几年的研究热点。2DEG作为其特征与材料本身的极化现象关系密切。本文主要从晶体微观结构角度介绍AlGaN/GaN异质结极化现象的产生、机理和方向性,着重讨论极化对异质结界面处诱生的二维电子气的影响。极化不仅可提高2DEG的浓度,而且还能使其迁移率得到提高。 AlGaN/GaN heterostructure has many characteristics which make it potential forelectronic devices that can be operated under conditions of high voltage, high frequency and hightemperature. 2DEG and polarization phenomena are the most important features of these devices.Based on the crystal structure, the mechanism and direction of polarization is presented. In addition,the characteristics of the 2DEG induced by polarization are reviewed. It is also pointed out thatpolarization can not only increase the concentration of 2DEG, but also improve the electron mobility.
作者 薛丽君 刘明 王燕 夏洋 陈宝钦
机构地区 中国科学院微电子研究所 清华大学微电子研究所
出处 《半导体技术》 CAS CSCD 北大核心 2004年第7期63-65,56,共4页 Semiconductor Technology
关键词 AIGAN/GAN 异质结 极化 二维电子气 2DEG heterostucture polarization 2DEG
分类号 TN304.26 [电子电信—物理电子学]
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共引文献5

同被引文献8

  • 1孔月婵,郑有炓.Ⅲ族氮化物异质结构二维电子气研究进展[J].物理学进展,2006,26(2):127-145. 被引量：9
  • 2申晔,邢怀中,俞建国,吕斌,茅惠兵,王基庆.极化诱导的内建电场对Mnδ掺杂的GaN/AlGaN量子阱居里温度的调制[J].物理学报,2007,56(6):3453-3457. 被引量：1
  • 3AMBACHER O, FOUTZ B, SMART J, et al. Two dimension electron gases induced by spontaneous and piezoelectric in undoped and doped A1GaN/GaN heterostructure [ J ]. J Appl Phys,2000,87(1) : 334 - 344.
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  • 6SMORCHKOVA I P, ELSASS C R, IBBETSON J P, et al. Polari zation-induced charge and electron mobility in AIGaN/GaN hereto structure grown by plasma-assisted moleculaPbeam epitaxy[J]. J Appl Phys,1999,86(8) : 4520- 4526.
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  • 8孔月婵,郑有炓,储荣明,顾书林.Al_xGa_(1-x)N/GaN异质结构中Al组分对二维电子气性质的影响[J].物理学报,2003,52(7):1756-1760. 被引量：21

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半导体技术
2004年 第7期

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