摘要
采用酸腐蚀法,在小面积(2 ×2 )多晶硅绒面制作的基础上,成功地在大面积(10 ×10 )多晶硅片表面上制作了绒面。利用扫描电子显微镜(SEM)观察其表面形貌并进行反射谱测试,结果表明腐蚀比较均匀,表面减反射效果较好,加权反射率可以达到5.26%,其减反射效果对入射光波长选择性不明显,远好于工业生产用的SiN减反膜。
By using acid-etching technique, large-area textured polycrystalline silicon(PS) layer(10 ㎝×10 ㎝) is successfully prepared. Its surface is observed through SEM, and its reflectance characteristics are tested. The results show that acidic etching of Si can lead to an uniform silicon surface layer with reflectance as low as 5.26%. The reflectance of PS layer shows non-apparent selectivity to optical wavelength, which is much better than that of SiN film used in industry.
出处
《半导体光电》
CAS
CSCD
北大核心
2004年第3期197-200,共4页
Semiconductor Optoelectronics
基金
河南省自然科学基金资助项目(004040200)
关键词
多晶硅绒面
酸腐蚀
减反射
textured polycrystalline silicon
acid-etching method
anti-reflection
