摘要
本文测量了GaP纯绿发光二极管在室温和液氮温度下的近红外发光光谱,观测到许多重叠的宽带发光.按高斯线型对光谱进行拟合,将其分解为6个发光谱峰,讨论了这些深能级发光的来源和它们对GaP发光二极管的发光强度的影响.
The near-infrared electroluminescence spectra of GaP pure green (PG) light-emitting diodes (LEDs) were studied at room temperature (300K) and liquid nitrogen temperature (77K). Many overlapping broad emission bands were observed in the luminescence spectra. The spectra were fitted with Gaussian lineshapes and can be decomposed into six Gaussian peaks. Finally the origins of the deep level luminescence bands in the GaP PG LEDs and the influence of deep levels on the luminescence intensities of the LEDs were discussed.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1993年第4期349-354,共6页
Chinese Journal of Luminescence
基金
国家自然科学基金
中国科学院长春物理研究所激发态物理开放研究实验室基金
关键词
近红外发光
发光二极管
磷化镓
near-infrared electroluminescence
deep level
light-emitting diode
