面接触三探针测试硅外延片的电阻率

Test for Resistivity of Silicon Epitaxial Layers by the Two-probe and One Hg surface Voltage Breakdown Method

本法(以下简称面三探针)是我国首创,它比点接触方法优越得多,可扩大目前外延片电阻率三探针测试的范围。本文阐述使用该法对校正样块硅单晶和外延片测试的情况。

This method is invented by China. It is more advantageous than the three contact method,because of its enlarging test range for the resistivity of epitaxial layers. The application of this method for the test of the calibration sample and epitaxial layers isintroduced. In comparison with the c-v meaning, the results are equal.