摘要
本文论述了WO_3薄膜氢离子敏器件的结构、原理、制备技术和测试分析。利用WO_3薄膜在H+溶液中由绝缘转化为导电特性,成功地研制成氢离子敏器件。这是一种简易而经济的微型pH敏器件技术。
The structure, principle. fabrication technology and performance test of WO3 based pH-sensitive device are described. WO3 thin film changes from isolator to conductor by hydrogen ion (H+ ) injection in electrochemical process. The pH-sensitive device is successfully fabricated by the sensitivity to H+ of WO3 thin film. It is a simple and lower-costed sensitive technique.
出处
《分析化学》
SCIE
EI
CAS
CSCD
北大核心
1993年第7期861-864,共4页
Chinese Journal of Analytical Chemistry
基金
国家自然科学基金
关键词
氧化钨
薄膜
氢离子敏器件
Tungsten trioxide, Thin film, pH-Sensitive device.