Pb在锗酸镉基质中的长余辉发光特性

Long Phosphorescence Persistence Property of Cd_2Ge_7O_(16)∶Pb^(2+)

通过高温固相反应在空气中制得单相 Cd2 Ge7O1 6 ∶ Pb2 +长余辉发光材料 .分析了 Cd2 Ge7O1 6 和Cd2 Ge7O1 6 ∶ Pb2 +的激发光谱和发射光谱 ,指出 Pb2 +的发光是该离子的 3P1 -1 S0 跃迁产生的 ;分析了Cd2 Ge7O1 6 ∶ Pb2 +的发光存在基质对 Pb2 +的能量传递 ;并把长余辉性质归结为基质中 Cd离子的挥发产生的空穴陷阱 .

Cd2Ge 7O16 ∶Pb 2+ was prepared by the high temperature solid state method. The material is a single phase. From the emission spectra and excitation spectra of Cd 2Ge 7O 16 ∶Pb 2+ and Cd 2Ge 7O 16 ,it can be seen that the luminescence of Cd 2Ge 7O 16 ∶Pb 2+ is due to the 3 P 1- 1 S 0 transitions of Pb 2+ ions, the peak at 497 nm of Cd 2Ge 7O 16 ∶Pb 2+ doped with 2%Pb 2+ in molar fraction is the best, and the host Cd 2Ge 7O 16 can transfer energy to Pb 2+ . Long afterglow property of \{Cd 2Ge 7O 16 ∶Pb 2+ \} is due to the hole trap of Cd 2Ge 7O 16 ∶Pb 2+ and the hole trap can trap hole,so afterglow luminescence appears. A mode of afterglow mechanism was proposed.