表面氧化外延制备钇系涂层导体隔离层

Fabricating Buffer Layer for Y-Based Coating Conductor by Surface Oxidation Epitaxy

采用表面氧化外延 (SOE)方法 ,在金属基底上研制NiO隔离层。通过研究温度、时间等工艺参数对形成立方织构NiO的影响 ,摸索出一套可获得单一、尖锐的立方织构NiO ,重复性好 ,适合于长带发展的工艺技术。同时研究了金属基带的表面状态、织构取向对NiO( 10 0 )表面的影响。X射线极图观测可直观地看到单一的立方织构 ,φ扫描检测其半高宽 (FWHM )均为 7.5°。扫描电镜观察NiO( 10 0 )膜层表面形貌 ,无裂纹且较为致密。

The NiO buffer layers were formed on pure Ni tape for YBCO coated conductor by the surface-oxidation epitaxy (SOE) process. Ni tapes were undertaken at different oxidation conditions such as temperature and time. It suggests that NiO texture is affected directly by the orientation and surface of substrate. X-ray diffraction (XRD) θ-2θ scan, φ-scan, and pole figure were employed to characterize the in-plane alignment and cube texture. X-ray φ-scan exhibited on Ni tape NiO film is formed with a high cube texture and an average FWHM (Full Width High Maximum) value 7.5°. The SEM was used to study the surface morphology of NiO films. No crack is found and the films appear dense. It is a simple and low cost technique with perfect reproducibility which is suitable for developing long length tapes.