微加工射频可变电容的研究与进展

Research and Process of RF MEMS Variable Capacitors

我们给出并比较各种最新颖的可变电容 ,这些电容包括上极板水平移动的可变电容、梳状水平移动的可变电容、平行板上下移动的可变电容、平行板梳状上下移动的可变电容、改变介质的交叠面积的可变电容、使用水平执行器的可变电容、使用绝缘衬底实现的可变电容和使用MEMS开关调节电容阵列来实现的可变电容 ,比较了目前的可变电容的各种结构以得出目前工艺条件可以较容易实现的高Q值的可变电容。

The latest Research development of variable capacitor is concluded in this article, and many new variable capacitors are given and compared. These capacitors are laterally driven variable capacitor, horizontally moving tunable comb capacitor, vertically moving parallel plate tunable capacitor, parallel comb plate horizontally moving variable capacitor, movable dielectric tunable capacitor, plane executed variable capacitor, using insulative wafer tunable capacitor and using MEMS switch executed variable capacitor. The purpose of this article is to compare the current architecture of many capacitors to draw a conclusion which capacitor is high Q and can be easily made in the current process.