硼离子注入n型硅的快速退火特性

PROPERTIES OF RAPID THERMAL ANNEALING ON B^+ IMPLANTED n TYPE SILICON

将B^+注入n型硅片后进行等时快速热退火.由于离子注入样品中原生缺陷较多,其中的一些缺陷在快速退火过程中又是产生位错的源,因此离子注入样品较其他样品更易生成位错一类的缺陷.在快速退火时若将样品两面盖以硅片,则有助于减少样品内的热应力和淬火速率,从而减小引进的各类缺陷的浓度.在温度为800℃时退火10s的效果(指缺陷浓度和少子寿命)与炉退火相仿而效率可以大大提高.

The defects induced in B^+ implanted Si wafer after rapid thermal annealing has been studied. There are different types of defects in the samples, since some of them are the origins of dislocation related defects during the process of RTA, the dislocation related defects will be more easily introduced in implanted sample by RTA, It is also found that if the samples are sandwiched by two silicon wafer in the annealing process, it can reduce quenching rate and thermal stress, so that the defects concentration can be decreased The effect of RTA at temperature 800℃ for 10 Seconds on the defects concentration and minority carrier lifetime is similar to that of furnace annealing.