摘要
本文提出一种适用于测量薄片材料复介电常数的改进TE0 1n谐振腔法。本方法将待测样品从短路活塞处抬高 ,即在待测薄片样品下面垫上已知复介电常数材料 ,以提高测量系统的灵敏度 ;如有必要也可以在待测薄片样品的上面压上一块已知复介电常数材料 ,提高样品材料的平整度 ,以减少空气隙带来的误差。文章推导了TE0 1n腔测量多层介质的理论计算公式 ,只要知道垫片和压块介质材料的复介电常数 ,通过实验测量和软件计算 ,就可以求得中间待测薄片的复介电常数。运用这种改进方案 ,我们对几种样品进行了测量 ,取得了较满意的结果。
An improved TE01n resonant cavity method is presented for measuring the complex permittivity of thin substrates. Unlike the traditional method, the material under test (MUT) is positioned higher than the short plate of the cavity by laying a pre-assigned material under MUT in order to get higher measurement precision. Meanwhile, to minimize the influence of the air gap, another pre-assigned material is recommended to put on the top of the MUT. The whole measurement steps are described in detail as well as the corresponding calculation formulae. Experiments are carried out on several typical samples to validate the feasibility of our improved technique.
出处
《电子测量与仪器学报》
CSCD
2004年第2期46-50,40,共6页
Journal of Electronic Measurement and Instrumentation
基金
国家自然科学基金和上海市教委基金资助项目
