摘要
本文给出了利用DS—125型光电池(阵)户外特性测试仪测得的自然光照条件下硅光电池组件的伏安特性。对同类产品在自然光照下和人工模拟光照下测得的电性能进行了比较。同时也对单晶硅和多晶硅两类不同晶体硅组件在两种不同测试条件下获得的结果进行了比较。 作者认为,由于模拟光下测得的光电池组件输出比自然光照下的输出值为大,因此,若以模拟光照条件下的峰瓦值来确定光电系统的容量时,应考虑1.10—1.20的修正系数。
The I -V Curves of typical single-, poly-crystal silicon solar modules under the natural sun -light are measured by means of DS-125 Outdoor I -V curve tracer. The results are presented here and compared with the electrical characteristics offered by the manufacturers measured from solar simulator.
The results show that because of different testing lights, a coefficient of 1. 10-1. 20 for correcting the peak power volume of the products should be introduced when a practical PV system is designed.
出处
《甘肃科学学报》
1993年第2期28-34,共7页
Journal of Gansu Sciences
基金
甘肃省自然科学基金
关键词
硅光电池
单晶硅
多晶硅
伏安特性
Crystal-silicon cell (photovoltaic module), I-V curve, natural sun - light, solar simulator.
