CMOS射频集成电路的研究进展

Advancement in the Research of CMOS RF IC's

近年来,射频集成电路(RFIC)的应用和研究得到了飞速的发展,CMOS射频IC的研究更是成为该领域的研究重点和热点。文章对CMOS技术在射频和微波领域的应用进行了详细的探讨,着重介绍了当前射频通讯中常用的收发机结构及其存在的问题和解决方案;分析了射频收发机前端关键电路模块低噪声放大器(LNA)、混频器(Mixer)、压控振荡器(VCO)、功率放大器(PA)和射频关键无源元件的最新研究进展;展望了CMOS技术在射频领域的发展前景。

In recent years, great progress has been made in the application and development of radio frequency integrated circuits (RF IC), while the research of CMOS RF IC's is becoming a hot topic in this field. The application of CMOS technology to RF and microwave domain is discussed, and the commonly used transceiver architectures are elaborated, together with their problems and solutions. Moreover, the key front-end blocks in the transceiver, including low noise amplifier (LNA), mixer, voltage controlled oscillator (VCO), power amplifier (PA) and passive elements, have been summarized. Finally, the future research direction of CMOS technology in RF IC domain is examined.