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SOICMOS模拟集成电路发展概述 被引量：1

A Survey of the Development of SOI CMOS Analog Integrated Circuits
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摘要 　从SOICMOS模拟集成电路(IC)中存在的关键问题——浮体效应——及其影响出发,介绍了在解决浮体效应以后,已实现的有代表性的模拟集成电路的发展状况。特别指出了SOICMOS在实现RF电路及SOC芯片中的优点。 Beginning with the floating body effect and its influence on SOI CMOS analog integrated circuits, the development of typical SOI CMOS analog IC's is described.Advantages of RF circuits and SOC's implemented in SOI CMOS are discussed in particular.
作者 刘忠立
机构地区 中国科学院半导体研究所
出处 《微电子学》 CAS CSCD 北大核心 2004年第4期384-389,共6页 Microelectronics
关键词 SOI CMOS 模拟集成电路 浮体效应 SOC SOI CMOS Analog integrated circuit RF circuit SOC
分类号 TN431.1 [电子电信—微电子学与固体电子学]
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参考文献9

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同被引文献18

  • 1严晓浪,吴晓波.低压低功耗模拟集成电路的发展[J].微电子学,2004,34(4):371-376. 被引量：10
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微电子学
2004年 第4期

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