摘要
介绍了模拟集成电路工艺的发展过程和现状,讨论了国内的BiCMOS工艺、互补双极工艺(CB)、和SOI双极工艺的最新进展。重点介绍了BiCMOS工艺的研究与开发,指出了模拟集成电路工艺的发展趋势。
An overview of analog IC technology is presented. The latest development of BiCMOS process, complementary bipolar technology and SOI deep trench isolation technology are elaborated, with emphasis on BiCMOS technology. Finally, the development trend of process technology for analog IC's are investigated in general.
出处
《微电子学》
CAS
CSCD
北大核心
2004年第4期398-401,共4页
Microelectronics