期刊文献+

毫米波行波电吸收调制器电极的设计与分析 被引量:1

DISGN AND ANALYSIS OF MILLIMETER TRAVELING-WAVE ELECTROABSORPTION MODULATOR'S ELECTRODE
下载PDF
导出
摘要 从电极设计的角度对行波电吸收调制器 (TW EAM)的带宽进行分析 ,用一个共面波导的TW EAM的测量数据进行设计计算演示 ,介绍了本设计方法的计算过程 .计算演示结果与实验测量结果相吻合 .文章还分析了中间电极宽度和电极间距对带宽的影响 .并简单说明用它计算设计的一个GaAs/GaAlAs多量子阱 (MQWS)TW The bandwidth of the coplanar traveling-wave electroabsorption modulator(TW-EAM) was analyzed in the aspect of designing electrode. The calculation process of this method was introduced by demostrating designing a coplanar TW-EAM with its measured data. The demostrating result tallies with the result of experimental measure. It was analyzed the effect of the width of middle electrode and the electrode interval on the bandwidth. An example is also introduced that a GaAs/GaAlAs multiple quantum wells(MQWs) TW-EAM with alarge bandwidth which was designed by using this method.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2004年第4期291-294,共4页 Journal of Infrared and Millimeter Waves
基金 国家自然科学基金资助项目 ( 60 1780 2 0 10 2 7410 7) 广东省自然科学基金资助项目 ( 0 112 0 4 2 0 0 2B1160 1)
关键词 毫米波 行波电吸收调制器 调制带宽 共面波导 量子阱 参数设计 traveling-wave electroabsorption modulator (TW-EAM) modulation bandwidth coplanar waveguide
  • 相关文献

参考文献4

  • 1[5]Hasnain G, Dienes A, Whinnery J R. Dispersion of picosecond pulses on coplanar transmission lines[J]. IEEE, Transaction on MTT, 1986, 34(6), 738-741.
  • 2[6]Li G L, Sun C K, Pappert S A, et al. Ultrahigh-speed traveling-wave electroabsorption modulator-design and analysis[J]. IEEE. Microwave Theory and Techniques,1999, 47(7): 1177-1183.
  • 3[7]Liao H H, Mei X B, Loi K K, et al. Microwave structures for traveling-wave MQW electroabsorption modulators for wide Band 1.3μm photonic links[J]. SPIE, Optoelectronic Integrated Circuits, 1997, 3006: 291-300.
  • 4[8]Irmscher S, Lewen R, Eriksson U. Influence of electrode width on high-speed performance of traveling-wave electro-absorption modulators[C]. 2001 International Conference on Indium Phosphide and Related Materials Conference Proceedings. 13th IPRM Japan: Nara, 2001.

同被引文献9

  • 1熊兵,王健,孙长征,罗毅.同一外延层结构高速DFB激光器/EA调制器集成光源的研究[J].红外与毫米波学报,2002,21(z1):19-22. 被引量:1
  • 2Bond A E,Shtengel G,Singh P,et al.High speed packaged electroabsorption modulators for optical communications [ C ].50th Electronic Components and Technology Conference,Las Vegas,NV,USA,2000.
  • 3Feng H,Makino T,Ogita S,et al.40Gb/s electro-absorption-modulator-integrated DFB laser with optimized design[ C].Optical Fiber Communication Conference and Exhibit,Anaheim,CA,United States,2002.
  • 4Xiong B,Wang J,Cai P F,et al.Novel low-cost wideband Si-based submount for 40Gb/s optoelectronic devices [ J ].Microw.Opt.Techn.Let.,2005,45(1):90-93.
  • 5Katz A,Pearton S J,Nakahara S,et al.sTantalum nitride films as resistors on chemical vapor deposited diamond substrates[J].J.Appl.Phys.,1993,73(10):5208-5212.
  • 6Henderson R,Zurcher P,Duvallet A,et al.Tantalum nitride thin film resistors for integration into copper metallization based RF-CMOS and BiCMOS technology platforms[ C ].Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.Ann Arbor,MI.USA,2001.
  • 7Poate J M,Tu K N,Mayer J W.Thin Films:Interdiffusion and Reactions [M].New York:Wiley,1978.
  • 8Morabito J M,Thomas J H,Lesh N G.Material characterisation of Ti-Cu-Ni-Au (TCNA)-a new low cost thin film conductor system[ J].IEEE Transactions on Parts,Hybrids and Packaging,1975,11(4):253-262.
  • 9Xiong B,Wang J,Zhang L J,et al.High-speed (>40GHz) integrated electroabsorption modulator based on identical epitaxial layer approach [ J ].IEEE Photon.Technol.Lett.,2005,17 (2):327-329.

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部