隧道穿透对Sol-gel多晶二氧化钒薄膜电阻率的影响模拟

IFLUENCE OF GRAIN BOUNDARY TUNNELING ON THE RESISTIVITY OF THE VO_2 FILMS PREPARED BY SOL-GEL METHOD

在多晶薄膜晶粒 晶界两相结构模型的基础上 ,考虑载流子对晶粒间界势垒区的隧穿机制 ,在 10℃～ 10 0℃的温度范围内 ,模拟了Sol gel多晶二氧化钒薄膜电阻率随温度的变化 ,模拟结果与实验结果有较好的吻合 .模拟结果显示 ,二氧化钒多晶薄膜的晶界效应限制了薄膜相变时电阻率的变化 。

Based on the model of the two phases of grain and grain boundary, the grain boundary tunneling of carriers was considered to simulate the change of the resistivity of VO2 polycrystalline film prepared by Sol-gel method in temperature range of 10degreesC similar to 100degreesC. The simulation results were in good agreement with the experiment data. The results indicate that the grain boundary effect decreases the magnitude of resistivity change of VO2 film durying semiconductor-to-metal phase transition, and meanwhile the VO2 film in metal phase has a negative temperature coefficient of resistivity.