三代微光像增强器制管工艺对阴极光电发射性能的影响

Effect of Tube Making Technique for Generation Ⅲ Low-light-level Image Intensifier on Photoemissive Property of photocathode

主要论述制管工艺对光电阴极发射性能的影响。通过分析仪器和光学检测方法对管子阴极制备的台内及台外工艺质量进行了在线追踪和监测,结果表明,影响台外工艺质量的主要因素是外延材料缺陷多、发射层表面氧化、杂质污染、掺杂浓度不均匀、掺杂浓度陡度变化小及GaAs与玻璃粘接产生的应力大;影响台内工艺质量的主要因素为阴极激活真空度低于8×10-8Pa,真空残气H2O,CO,CO2及C分压大于10-8Pa,阴极激活铯和氧源提纯不彻底。利用透反射光照法激活台内对组件表面测线,发现发射层表面针孔、裂纹和发雾是造成阴极发射性能低的关键因素。

The effect of the tube making Technique on the photoemissive property of the photocathode is described. The technical quality of the cathode assembly preparation and the cathode activation is detected on line with the analytical instruments and the method of optical detection. The result shows that the main factors, which affect the technical quality of the cathode assembly preparation, are surface oxidization of emissive layer, impurity pollution, doped concentration nonuniform, less variation of doped concentration gradient, the sticking stress of GaAs and glass,and the main factors, which affect the cathode activation, are the degree of vacuum for activation at lower than 8×10^(-8)Pa, the partial pressure of H_2O,CO,CO_2 and C in the vacuum residial gas at higher than 10^(-8)Pa and the improper caesium and oxygen refining. With a method of the transmission-reflection luminance, we also found that the pinholes, cracks and atomization on the surface of the emissive layer are the key factors that might cause the lower emissive property of the photocathode.