采用MEMS制作新型硅磁敏三极管特性研究

Characteristic research of new type silicon magneto transistor manufactured by MEMS techniques

给出采用MEMS技术在硅片表面制作矩形板状立体结构新型硅磁敏三极管的基本结构及灵敏度特性、电压-电流特性、磁电特性和温度特性,对新型硅磁敏三极管样品基本特性进行研究的结果表明:该新型硅磁敏三极管的集电极电流相对磁灵敏度较高,最大可达227%/T,具有负温度系数且温度系数较小。同时,给出影响新型硅磁敏三极管特性的基本因素。

A basic structure about manufacturing a new type silicon magneto transistor with rectangle-plank cubic construction on silicon surface with MEMS technique is shown.Sensitivity,I-V,magnetoelectric and temperature characteristics can also be got.On the resultant of the research,the high magnetic-sensitivity of Ic that maximum can reach 227 %/T and the small negative temperature coefficient can be attained.Meanwhile,basic factors about affecting new type silicon magneto transistor characteristic are also shown.