WO_x:Mo薄膜的结构及电致变色性能研究

STUDY ON STRUCTURE AND ELECTROCHROMIC PERFORMANCES OF WO_x∶Mo FILMS

采用反应磁控溅射工艺,以纯钨和纯钼为靶材在ITO玻璃上制备Mo掺杂WOx电致变色薄膜,用薄膜的透射光谱和XRD衍射方法对掺杂后薄膜的电致变色性能和结构进行了分析,研究了Mo掺杂对WOx薄膜电致变色性能和微观结构的影响机理。实验结果表明:在一定掺杂范围内,Mo掺杂对薄膜电致变色性能有较大提高;掺杂越均匀,对薄膜电致变色性能的改善越显著。影响薄膜电致变色性能的相应掺杂量由溅射时间表示,相对掺量存在最佳值,即7.7%附近,薄膜的变色性能可得到最大的提高,按实验结果趋势分析掺杂量存在有效范围,超出有效掺杂范围,掺杂便会失效。XRD分析表明,掺杂Mo之后的WOx薄膜仍为非晶态,且非晶态有增强的趋势。

Using pure tungsten and molybdenum as targets, WOx films doped with Mo were deposited on ITO glass substrates by reactive magnetron sputtering. The electrochromic performances and structure of the films were analyzed by XRD and transmittance spectrum of the films, and the influence mechanism of Mo-doping on WOx films' electrochromic performances and structure were studied. The experimental results show that in a certain doping range, WOx films with Mo-doping would improve the electrochromic performances, and the more even the doping is, the better the electrochromic performances of the film are. The corresponding doping quantity which influence electrochromic performances are denoted roughly by sputtering time,and the preferential relative doping-value is 7.7%, around which the electrochromic performances can be improved greatly. According the tendency of experiment results, an effective range of relative doping quantity would be existent, beyond which the doping will be ineffective. The XRD shows that the doped WOx film with Mo is still amorphous, and tends to be stronger.