摘要
在用热丝CVD方法生长金刚石薄膜中,研究了生长条件对制备膜中石墨和非晶碳成份的影响,发现较高的碳源浓度或较低的衬底温度会使制备膜中非金刚石相碳成份增加。
The effect of the deposition conditions on the graphite or amorphous carbon component in the formation of diamond thin films by HFCVD method was studied. We found that high CH3COCH3 concentration or low-substrate temperature would cause the graphit or amorphous carbon component of the formed films to increase.
出处
《高压物理学报》
CAS
CSCD
北大核心
1993年第4期301-304,共4页
Chinese Journal of High Pressure Physics
