铝表面化学气相沉积SiO_x膜层的显微结构和性能

Microstructure and properties of SiO_x filmon aluminum substrate prepared by CVD process

采用低温常压化学气相沉积(CVD)方法在铝基底上制备了硅氧化物陶瓷膜层。使用SEM、XPS、AFM、XRD、HRTEM和UV VIS等技术分析了膜层的形貌、成分和组织结构特征,测试了膜层的孔隙率、光学和显微力学性能。结果表明:硅氧化物SiOx陶瓷膜层在铝基表面以气相反应沉积硅氧化物颗粒—颗粒嵌镶堆垛—融合长大的方式生成,大部分膜层为非晶态区域,其中包含少量局部有序区域,SiOx中的硅氧原子比为1∶1.60～1∶1.75,膜层疏松多孔,具有很高的紫外可见光吸收率,膜层与基底具有很好的结合性。

A new kind of silicon oxide(SiO_x) film was prepared on aluminum substrate by ambient pressure chemical vapor deposition(APCVD). The morphology, composition and microstructure characteristics of the film were tested by SEM, XPS, AFM, XRD, HRTEM and UV-VIS techniques, respectively. The results show that the SiO_x film most comprises uncrystalline microstructure with a fraction of dispersed ordered zones. The deposition process can be described as the reaction of SiH_4 and O_2 for forming SiO_x particle and deposition on heated Al substrate, close packing of the SiO_x particles and growing into coating layer. The tests also show that the film is loosen and porous, and the atomic ratio of the silicon to oxygen of the SiO_x film is 1∶1.601∶1.75. The substrate and the film are well-bonded. The visible and ultraviolet light reflection value of the composite film is very low.