摘要
详细综述了一维ZnO纳米线的制备方法,包括气–液–固催化反应生长法、模板限制辅助生长法、金属有机气相外延生长法、自组织生长法等,介绍了其在微电子及光电子领域的潜在应用。并报道了作者采用热氧化射频磁控共溅射Zn/SiO2复合膜,金属锌从SiO2基质中析出合成了六方纤锌矿结构ZnO纳米线。
Several preparation methods of one-dimensional ZnO nanowires are reviewed in details, including catalytic reaction growth based on vapor-liquid-solid (VLS) mechanism, templet-confined growth, MOVPE growth and self-assembly growth etc. The potential applications in the fields of microelectronics and optoelectronics of ZnO nanowires are also introduced. It also reports that our Zn/SiO2 composite thin films deposited by RF magnetron sputtering were annealed in the air, then metal Zn separated out from SiO2 matrix and was oxidated into ZnO nanowires with hexagonal wurtzite stucture.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2004年第8期43-45,共3页
Electronic Components And Materials
基金
国家自然科学基金重大研究计划资助(90201025
90301002)
关键词
无机非金属材料
一维ZnO纳米线
综述
制备方法
潜在应用
inorganic non-metallic materials
one-dimensional ZnO nanowires
review
growth methods
potential applications
