摘要
探讨了用于彩色滤光片的低电阻和低压应力的ITO透明导电膜工艺。用磁控溅射方法在不同温度的衬底上制备了ITO薄膜。研究了膜形衬底温度与膜结晶化程度的关系,以及膜形衬底温度对膜电阻和压应力的影响。对不同衬底温度下形成的ITO薄膜进行了退火处理,并对退火后的ITO薄膜的电阻和压应力特性进行了分析。结果表明,采用室温沉积非晶态ITO膜,在真空退火下可获得低电阻、低压应力的多晶相ITO膜。
The low resistance and low pressure stress ITO film for color filter is investigated. ITO films are deposited on different temperature substrates by DC magnetron sputtering. The influence of substrate temperature on ITO film's crystalline, sheet resistance and pressure stress is also reported. The sheet resistance and pressure stress of annealed ITO films prepared under different substrate temperature are investigated by DC magnetron sputtering. The polycrystalline ITO film with low resistance and low pressure stress can be fabricated by vacuum annealing amorphous ITO film deposited at room temperature.
出处
《光学技术》
CAS
CSCD
2004年第4期455-456,459,共3页
Optical Technique
基金
国家863计划资助项目(2001AA313090)
