硫化矿细菌浸出的半导体能带理论分析

Fundamental Analysis of Sulfide Bioleaching Process Based on Semiconductor Electrochemistry

许多硫化矿物为半导体 ,硫化矿氧化浸出过程实际是一半导体 溶液界面电子或空穴转移的过程。基于传统的半导体界面氧化理论 ,系统分析细菌存在时硫化矿 溶液界面电子或空穴转移步骤 ,提出黄铁矿、黄铜矿、铜兰细菌浸出过程的半导体 溶液界面电子及空穴转移模型 。

Many sulfide are semiconductor, the leaching process of sulfide is actually the electron and holes transferring process on semiconductor/solution interface. Based on the fundamental theory analysis, the electron and holes transferring mechanism on the sulfide semiconductor/ solution interface in the presence of the acidic bacteria especially Acidthiobacillus ferrooxidans in the solution are illustrated, and the different ways and steps of metallic ion extraction and sulfur oxidation of pyrite, chalcopyrite as well as covelite on the interface are determined and the process is described by schematic model.