硅的凸角补偿尺寸及腐蚀中避免削角的新方法

Dimension of convex corner compensation and a newmethod of avoiding corner undercutting in etching of Si

在硅的腐蚀过程中,如果不对台面凸角加以补偿,会产生严重的削角现象。本文采用在凸角上补偿正方形掩膜的方法,通过实验得出要在TMAH腐蚀液中将厚度约为300μm的硅片腐蚀出完整的台面凸角结构需要补偿多大尺寸的正方形掩膜。硅片与玻璃键合后,由于硅晶格的变化使得与玻璃键合的那一层硅很难腐蚀掉,本文也介绍了一种缩短腐蚀时间、避免削角的方法。

The corner undercutting will appear if there is no compensation on convex corner in etching of Si. The method of square mask compensation on convex corner is applied to find what square mask is compensated if a intact convex corner will be gained. The dimension of compensated square mask is achieved by experiments. After Si-glass bonding,the layer of Si attaching to glass is difficult to etch due to the changed lattice of Si,a new method of shortening etching time and avoiding corner undercutting is introduced,too.