反应磁控溅射制备的Cr-N薄膜的成相行为

Phase Constitution in Cr-N Films Prepared by Reactive Magnetron Sputtering Method

采用反应磁控溅射在不锈钢衬底上制备Cr N薄膜 ,并研究了基片温度、氮气分压和溅射功率变化对薄膜相组成的影响。结果表明 ,基片温度升高使薄膜由单一的CrN相变成CrN和Cr2 N两相共存 ,同时使有效的沉积速率下降 ;在基片温度为 373K、溅射功率约 4 5W时 ,氮气和氩气流量比在 1:4到 3:2的范围内变化时 ,薄膜的相组成几乎没有明显的变化 ;过高的溅射功率使薄膜以非晶态的形式存在。热处理后的Cr N薄膜通常有CrN和Cr2

Cr-N films are prepared by reactive magnetron sputtering method on the substrate of stainless steel. The effect of substrate temperature, partial pressure of nitrogen, and sputtering power on the phase constitution of Cr-N film is researched. The elevation of substrate temperature causes the second phase Cr 2N appear in CrN, and decreases the effective deposition rate. There is no obvious variation in phase composition in Cr-N film when the flow ratio of N 2:Ar changes from 1:4 to 3:2 under the condition of the substrate temperature 373K and the sputtering power 45W. The change of partial pressure of nitrogen brings barely change of the phase constitution in Cr-N. High sputtering power produces an amorphous Cr-N film. Annealing generally causes the co-existence of CrN and Cr 2N.