MO-PECVD SnO_(2-x)气敏薄膜

MO-PECVDSnO_(2-x) Gas-Sensing Thin Film

以金属有机化合物(MO)四甲基锡[sn(CH_3)_4]为源物质,利用等离子体增强化学气相沉积技术,分别在单晶硅片、三氧化二铝陶瓷基片上淀积了纯净的SnO_(2-x)薄膜,对淀积的一些工艺条件,膜的结构、成分和薄膜元件的气敏性能进行了研究,并与普通PECVDSnO_(2-x)薄膜元件的气敏性能作了比较,对SnO_(2-x)膜的气敏机理作了探讨。

Fine SnO_(2-x) gas-sensing thin films on the crystal silicon and Al_2O_3 ceramic substrats were prepared by MO-PECVD process,using metallorga- nic compound Sn(CH_3)_4 as a source ma- terial.The deposition factors,the com- positions,and structures of the films were studied.Then the gas-sensing cha- racteristics of the films were studied and compared with those of PECVD SnO_(2-x) thin films using SnCl_4 as a source mate- rial.In this paper the pas-sensing me- chanism of the films were also discussed.