摘要
应用中频感应提拉法生长了掺杂浓度高达 5 0at. %的Yb∶YAG晶体 ,研究了室温下Yb∶YAG晶体的吸收和发射光谱特性以及荧光寿命 ,在 939nm和 96 9nm处存在Yb3 + 离子的 2个吸收带 ,能与InGaAs激光二极管(LD)有效耦合 ,适合激光管二极抽运。其荧光主峰位于 10 32nm附近 ,Yb∶YAG晶体的荧光寿命为 390 μs。比较了高掺杂与低掺杂Yb∶YAG晶体的光谱参数 。
Yb∶YAG (Yb∶Y 3Al 5O 12 ) crystal with Yb 3+ doping level up to 50 at. % has been grown by Czochralski method. The absorption, emission spectra and fluorescence lifetime of Yb∶YAG crystal at room temperature have also been studied. Two absorption bands are centered at 939 nm and 969 nm of Yb 3+ , respectively, which are suitable for InGaAs diode laser pumping, and the main fluorescence band is located around 1032 nm. The fluorescence lifetime of Yb∶YAG laser crystal is 390 μs. The spectral parameters of low and high doping Yb∶YAG crystals are compared. The results indicate that Yb∶YAG with high doping concentration is a promising laser material for high power laser output.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2004年第8期955-958,共4页
Chinese Journal of Lasers
基金
国家 8 6 3计划 (2 0 0 2AA3110 30 )资助项目
关键词
材料
YB:YAG晶体
提拉法
晶体生长
光谱特性
materials
Yb∶YAG crystal
Czochralski method
crystal growth
spectral performance
