摘要
指出内建自测试是嵌入式存储器测试的一种有效方法 ,对该领域的研究情况进行了评述 .总结了存储器传统的故障模型 ,重点讨论了诱导故障分析方法以及读干扰故障、错误读等新的故障模型 .详细分析了嵌入式存储器的典型内建自测试方案 ,讨论了在内建自测试电路中增加内建冗余分析、内建故障诊断和内建自修复等功能的可行性 .
Built-in self-test (BIST) is considered as an efficient approach for embedded memories testing.This paper gives a survey on the up-to-date development of research in this field.It begins with an overview of conventional fault models for memories so far.The inductive fault analysis approach and some new fault models such as read disturb fault and incorrect read fault are discussed.The typical BIST schemes for embedded memories are analyzed.The feasibility of adding built-in redundancy analysis,built-in self-diagnosis and built-in self-repair into BIST circuits is analyzed.
出处
《同济大学学报(自然科学版)》
EI
CAS
CSCD
北大核心
2004年第8期1050-1056,共7页
Journal of Tongji University:Natural Science
基金
国家自然科学基金资助项目 (90 2 0 70 2 1)
同济大学理科科技发展基金资助项目