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掺杂浓度对AZO薄膜结构和性能的影响 被引量:5

Influence of the Dopant Concentration on Its Microstructure and Properties of AZO Film
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摘要 采用溶胶-凝胶工艺在玻璃基片上制备Al3+掺杂型的ZnO(AZO)透明导电薄膜,对薄膜进行了XRD和SEM分析,并对其光电性能作了详细的研究.结果表明:薄膜为纤锌矿型结构,呈c轴方向择优生长;薄膜的可见光透过率可达80%以上;Al3+掺杂型的ZnO透明导电薄膜的电阻率为1.5×10-2~8.2×10-2 Ω·cm. AZO(Al:ZnO) films on glass substrate were prepared by sol-gel method. Their microstructures, electrical and optical properties were studied with X-ray diffraction spectroscopy (XRD) and SEM. The results show that they have a polycrystalline hexagonal wurtzite structure with highly preferred orientation along the (002) plane, their optical transmittance are over 80% and their electrical resistivity varied from1 5×10–2 to 8.2×10–2 ?·cm.
出处 《电子元件与材料》 CAS CSCD 北大核心 2004年第9期31-33,共3页 Electronic Components And Materials
关键词 掺杂浓度 AZO薄膜 溶胶-凝胶 SEM XRD 电阻率 semiconductor materials oploeleclronics and laser technology AZO thin film sol-gel electrical and optical properties
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  • 1Mohamed G A, Mohamed E A, Elfadl A A. Optical properties and surface morphology of Li-doped ZnO thin films deposited on different substrates by DC magnetron sputtering method [J]. Physical B, 2001, 308-310: 949-953.
  • 2Kim K H, Park K C, Ma D Y. The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering [J]. Thin Solid Films, 1997, 305: 201-209.
  • 3Wendt R, Ellmer K. DC and RF magnetron sputtering of ZnO:Al films from metallic and ceramic targets: A comparative study [J]. Surf Coat Technol, 1997, 93: 27-31.
  • 4Polley T A, Carter W B, Poker D B. Deposited of zinc oxide thin films by combustion CVD [J]. Thin Solid Films, 1999, 357: 132-136.
  • 5Jae H C, Hitoshi T, Tomoj K. Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition [J]. J Cryst Growth, 2001, 226: 493-500.
  • 6Swam y H G, Reddy P J. Preparation of ZnO films by activated reactive evaporation [J]. Semicond Sci Technol, 1990, 5: 980-981.
  • 7马瑾,李淑英.真空反应蒸发法制备ZnO透明导电薄膜[J].山东大学学报(自然科学版),1994,29(2):230-234. 被引量:13
  • 8黄佳木,董建华,张新元.ZnO:Al(ZAO)透明导电薄膜的制备及其特性[J].电子元件与材料,2002,21(11):7-10. 被引量:30

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