摘要
基于有限元方法和实际器件的材料和结构参数 ,对 1.3 μmInAsP/InGaAsP脊波导多量子阱激光器和 8μmInAlAs/InGaAs/InP量子级联激光器等半导体激光器在CW以及各种脉冲驱动条件下的热场分布进行了模拟计算和分析 ,并对研制的实际器件采用变脉冲方法对其热特性进行了测量表征 ,实测与模拟所得结果相当吻合。
The thermal field distribution of different type of semiconductor lasers, including 1.3 μm InAsP/InGaAsP multi-quantum well ridge waveguide lasers and 8 μm InAlAs/InGaAs/InP quantum cascade lasers in CW and pulse driving conditions, was simulated by using finite-element method, in which the material and structural parameters were all based on our practical devices. The thermal characteristics of those lasers also were measured by using pulse-variation method. The measured results are well coincident with the simulations. Those results are quite important to the further optimization of the design, processing as well as packaging of the lasers.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2004年第3期551-553,共3页
Chinese Journal of Rare Metals
基金
国家"973" ( 2 0 0 0 0 683 0 2 0 3 )
国家"863" ( 2 0 0 1AA3 1115 0
2 0 0 2AA3 13 0 40 )
国家自然科学基金重点项目 ( 60 13 60 10 )资助
关键词
半导体激光器
热场分析
热阻
有限元
semiconductor lasers
thermal analysis
thermal resistance
finite-element method
