室温工作的AlGaAsSb/InGaAsSb 2μm多量子阱脊波导半导体激光器

Room Temperature AlGaAsSb/InGaAsSb 2 μm Ridge-Waveguide Multi-Quantum-Well Lasers

报道了可在室温下脉冲工作的AlGaAsSb/InGaAsSb 2 μm多量子阱脊波导半导体激光器。器件材料生长采用固态源分子束外延的方法 ,器件有源层采用应变补偿量子阱结构 ,激光器结构中引入了加宽波导的设计。制备的多量子阱激光器最高工作温度可达 60℃ ,激射波长2 0 8μm。室温下阈值电流为 3 5 0mA ,2 0～ 5 0℃范围内特征温度为 88K。

AlGaAsSb/InGaAsSb 2 μm ridge-waveguide multi-quantum-well lasers can be pulsed worked under room temperature were reported. The lasers structure was grown by solid state molecular beam epitaxy, and strained-compensated quantum-well was designed to be the active layer. We also employed layer of broaden waveguide in the laser structure. Laser devices can be emitting at 2.08 μm operated up to 60 ℃ with the threshold current of 350 mA at room temperature, and the characteristic temperature is 88 K in the range of 20～50 ℃.